{"product_id":"widebandgap-electronic-devices-volume-622-mrs-proceedings","title":"WideBandgap Electronic Devices: Volume 622 (MRS Proceedings)","description":"\u003cp\u003eProduct DescriptionInterest in widebandgap semiconductors for highpower\/hightemperature electronics remains prominent. For such applications, SiC is by far the most mature semiconductor material. GaN and diamond, however, have also become prime candidates. While diamond has several advantages over the other two materials, producing large single crystals, as well as the inability to achieve ntype doping, have limited device fabrication. For GaN, recent advances in crystal growth and processing capabilities, as well as excellent transport properties, have yielded a great deal of device development, yet thermal conduction remains an issue. SiC has excellent thermal conductivity, highbreakdown voltages, and welldeveloped substrates and processing techniques. This book deals with a wide range of technical activity in the area of widebandgap highpower\/hightemperature electronic devices and covers topics including the fabrication and performance of GaNbased and SiCbased devices, as well as issues related to growth, characterization, and processing of widebandgap materials. Several summaries of the current status of the field are provided.Book DescriptionThe MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.\u003c\/p\u003e","brand":"Cambridge University Press","offers":[{"title":"Shul, Randy J. \/ hardcover","offer_id":47844385685749,"sku":"SONG1558995307","price":608.95,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0737\/5804\/8501\/files\/31ZDSBEPBBL.jpg?v=1773813379","url":"https:\/\/ergodebooks.com\/products\/widebandgap-electronic-devices-volume-622-mrs-proceedings","provider":"Ergodebooks","version":"1.0","type":"link"}