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TDCV CHARACTERIZATION OF DEFECTS IN ULTRA THIN SIO2 KINDS OF FILMS: TDCV = Temperature Dependent Capacitance Voltage,Used TDCV CHARACTERIZATION OF DEFECTS IN ULTRA THIN SIO2 KINDS OF FILMS: TDCV = Temperature Dependent Capacitance Voltage,Used
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TDCV CHARACTERIZATION OF DEFECTS IN ULTRA THIN SIO2 KINDS OF...
When a MOS structure (Metal Oxide Semiconductor) is subjected to an external perturbation, defects are generated in the oxide and at the oxidesemiconductor interface. If...
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