A numerical study for doping of graphene transistors: Analysis and simulations about the material of the future electronics,Used

A numerical study for doping of graphene transistors: Analysis and simulations about the material of the future electronics,Used

In Stock
SKU: DADAX3659192422
Brand: LAP Lambert Academic Publishing
$77.22 $110.31
Save $33.09
Quantity
Add to wishlist
Add to compare

Processing time: 1-3 days

US Orders Ships in: 3-5 days

International Orders Ships in: 8-12 days

Return Policy: 15-days return on defective items

Payment Option
Payment Methods

Help

If you have any questions, you are always welcome to contact us. We'll get back to you as soon as possible, withing 24 hours on weekdays.

Customer service

All questions about your order, return and delivery must be sent to our customer service team by e-mail at yourstore@yourdomain.com

Sale & Press

If you are interested in selling our products, need more information about our brand or wish to make a collaboration, please contact us at press@yourdomain.com

Although CMOS technology will still be in a near future the principal material for all electronic manifacturers, in recent years new discoveries have catalyzed research interest in order to overcome the physical limitations of silicon. Graphene is undoubtedly one of the most interesting of these, combining nanometric thickness, atomic width and a very high conductivity. Unfortunately, the absence of an energy gap between the valence band and the conduction band makes the material not optimal for digital applications. The purpose of this work is to evaluate the possible solutions to the problem by means of chemical functionalization and doping in graphene nanoribbons. The book starts with a wide description of the calculation methodology, the tightbinding method with the aid of the software package Gaussian 03, and the application of this technique to the case of an infinite plane of graphene, analyzing all the necessary steps to realize a transistor in graphene useful for digital applications. The complete simulation of a FET in graphene is therefore showed, underlying the importance of doping or functionalization for this material.

⚠️ WARNING (California Proposition 65):

This product may contain chemicals known to the State of California to cause cancer, birth defects, or other reproductive harm.

For more information, please visit www.P65Warnings.ca.gov.

Recently Viewed