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The present volume contains most of the papers presented at the Symposium A 'Defects in Silicon: Hydrogen'. The symposium took place at the 1998 Spring Meeting of the European Materials Research Society from June 1619 1998, Strasbourg, France, and was devoted to the fundamental aspects of hydrogen in crystalline silicon and their influence on silicon technology. The twoandahalf day scientific program included 13 invited and 35 contributed papers.
⚠️ WARNING (California Proposition 65):
This product may contain chemicals known to the State of California to cause cancer,
birth defects, or other reproductive harm.
Q: What is the main focus of the book 'Defects in Silicon: Hydrogen'?A: The book centers on the fundamental aspects of hydrogen in crystalline silicon and its impact on silicon technology, based on papers presented at a symposium in 1998.
Q: Who is the author of 'Defects in Silicon: Hydrogen'?A: The author of the book is J. Weber.
Q: When was 'Defects in Silicon: Hydrogen' published?A: The book was published on June 2, 1999.
Q: What is the binding type of this book?A: The book is available in hardcover binding.
Q: How many pages does 'Defects in Silicon: Hydrogen' have?A: The book contains a total of 190 pages.
Q: What type of papers does this volume include?A: The volume includes invited and contributed papers presented at the Symposium A 'Defects in Silicon: Hydrogen'.
Q: What was the event associated with the publication of this book?A: The book is associated with the 1998 Spring Meeting of the European Materials Research Society.
Q: Is there a specific edition of 'Defects in Silicon: Hydrogen'?A: Yes, this book is the first edition.
Q: What category does 'Defects in Silicon: Hydrogen' belong to?A: The book is categorized under Microelectronics.
Q: Where did the symposium that inspired this book take place?A: The symposium took place in Strasbourg, France.
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