DEVICE MODELING OF AlGaN/GaN HIGH ELECTRON MOBILITY TRANSISTORS (HEMTs): AN ANALYTICAL APPROACH,Used

DEVICE MODELING OF AlGaN/GaN HIGH ELECTRON MOBILITY TRANSISTORS (HEMTs): AN ANALYTICAL APPROACH,Used

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SKU: DADAX3838396294
Brand: LAP Lambert Academic Publishing
Condition: New
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High electron mobility transistor (HEMT) made of compound semiconductors exhibit great potential for highpower applications at RF, microwave, and millimeterwave frequencies. Owing largely to a high electrical breakdown field, electron sheet charge density, and substrate material with high thermal conductivity, these are capable of handling larger power density signals at high temperatures in unfriendly environments. The present work involves the analytical modeling of AlGaN/GaN material system based HEMTs. A polynomial represents Fermilevel as a nonlinear function of sheet carrier density at the interface of HEMTs. Using this polynomial, models for finding the temperature dependent gate capacitance, parasitic MESFET dependent transconductance and dc characteristics including selfheating effects were formulated. The effects of spontaneous and piezoelectric polarization fields, have been investigated in detail. All results show reasonable agreement with the experimental data. Our analytical simulation should be useful in device designing, allowing interactive optimization of device configuration and economically complementing experimental investigations.

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