Electronic Transport Mechanism of Se/cSi Diodes: Design of Soler Cells,Used

Electronic Transport Mechanism of Se/cSi Diodes: Design of Soler Cells,Used

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The electrical characteristics of the aSe/cSi heterojunction Solar Cell have been studied, where currentvoltage characterization under dark conditions shows that forward bias current varieties approximately exponentially with voltage bias. This conforms to tunnelingrecombination model, and reverse bias shows little stop and soft breakdown voltage. The currentvoltage characterization under illumination found that the efficiency ? increase with increasing the thickness and annealing temperatures from 0.806 to 1.62 and from 0.806 to 2.61, while increasing with increasing annealing temperatures because of structure changes of the films and improve interface layer between aSe and cSi. At deposition SiO2 it was found from the currentvoltage characterization under illumination that the values ? increase from 0.806 to 2.22.

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