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Bindng
Fundamentals of Modern VLSI Devices
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Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationallyrenowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an indepth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, highfield transport model, and SiGebase bipolar devices.
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