GaN HEMT Modeling and Design for mm and submm Wave Power Amplifiers: Through Monte Carlo ParticleBased Device Simulations,Used

GaN HEMT Modeling and Design for mm and submm Wave Power Amplifiers: Through Monte Carlo ParticleBased Device Simulations,Used

In Stock
SKU: DADAX3847325671
Brand: LAP Lambert Academic Publishing
$113.77 $162.53
Save $48.76
Quantity
Add to wishlist
Add to compare

Processing time: 1-3 days

US Orders Ships in: 3-5 days

International Orders Ships in: 8-12 days

Return Policy: 15-days return on defective items

Payment Option
Payment Methods

Help

If you have any questions, you are always welcome to contact us. We'll get back to you as soon as possible, withing 24 hours on weekdays.

Customer service

All questions about your order, return and delivery must be sent to our customer service team by e-mail at yourstore@yourdomain.com

Sale & Press

If you are interested in selling our products, need more information about our brand or wish to make a collaboration, please contact us at press@yourdomain.com

This work initially compares GaN high electron mobility transistors (HEMTs) based on the established Gaface technology and the emerging Nface technology. An investigation is then carried out on the short channel effects in ultrascaled GaN and InP HEMTs. The dielectric effects of the passivation layer in millimeterwave, highpower GaN HEMTs are also investigated by focusing on the effective gate length, the gate fringing capacitance, and the draintogate feedback capacitance. Lastly, efficient Full Band Monte Carlo particlebased device simulations of the largesignal performance of millimeterwave transistor power amplifiers with highQ matching networks are reported for the first time. In particular, a Cellular Monte Carlo code is selfconsistently coupled with a Harmonic Balance frequency domain circuit solver. This book provides device engineers with an insight about the link between the nanoscale carrier dynamics and the device performance. It also introduces an efficient tool for the device earlystage design for RF power amplifiers.

⚠️ WARNING (California Proposition 65):

This product may contain chemicals known to the State of California to cause cancer, birth defects, or other reproductive harm.

For more information, please visit www.P65Warnings.ca.gov.

Recently Viewed