Title
GaN HEMT Modeling and Design for mm and submm Wave Power Amplifiers: Through Monte Carlo ParticleBased Device Simulations,Used
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This work initially compares GaN high electron mobility transistors (HEMTs) based on the established Gaface technology and the emerging Nface technology. An investigation is then carried out on the short channel effects in ultrascaled GaN and InP HEMTs. The dielectric effects of the passivation layer in millimeterwave, highpower GaN HEMTs are also investigated by focusing on the effective gate length, the gate fringing capacitance, and the draintogate feedback capacitance. Lastly, efficient Full Band Monte Carlo particlebased device simulations of the largesignal performance of millimeterwave transistor power amplifiers with highQ matching networks are reported for the first time. In particular, a Cellular Monte Carlo code is selfconsistently coupled with a Harmonic Balance frequency domain circuit solver. This book provides device engineers with an insight about the link between the nanoscale carrier dynamics and the device performance. It also introduces an efficient tool for the device earlystage design for RF power amplifiers.
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We provide a 2-year limited warranty, from the date of purchase for all our products.
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This warranty strictly does not cover damages that arose from negligence, misuse, wear and tear, or not in accordance with product instructions (dropping the product, etc.).
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