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Solar cells based on monocrystalline silicon (cSi) can potentially achieve high sunlight energy conversion efficiencies and thus could reach grid parity despite the high cost of cSi. The efficiency of standard cSi solar cells featuring diffused emitters and aluminum back surface fields (BSF) is limited by interface recombination. Alternatively the growth of intrinsic/doped amorphous silicon (a Si:H) layer stacks on cSi effectively passivates the cSi surface and simultaneously forms the emitter and BSF. Such Si heterojunction (HJ) solar cells can use thin cSi wafers, benefit from low production cost of aSi:H layers and enable the highest efficiencies. The focus of this work is the study of interfaces in aSi:H/cSi heterostructures, particularly the electronic quality of the aSi:H/cSi heterointerface and its effect on the subsequent a Si:H/cSi HJ solar cell fabrication. Interface recombination modeling by considering the amphoteric nature of Si dangling bonds is in excellent agreement with measurements, and provides insight into the microscopic passivation mechanisms.
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