Title
Investigation of pin GaAs structures by DLTS method: The Deep Level Transient Spectroscopy in application to GaAs pin struct,Used
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The DLTS (Deep Level Transient Sprctroscopy) method is used for measuring of deep levels in pn structures, Schottky diodes, etc. The pin diodes are complicated multi layer structures, containing wide ilayer and two junctions: ni and pi. As a result, the diode consist of two series capacities. Applied voltage is focused on ilayer and weakly modulates the space charge area in n and p layers. The "source" (technological layer) that is responsible for DLTS signal can be hardly recognized, and therefore it is difficult to estimate the concentration of deep levels and determine the origin of these defects. The main goal of the work is the interpretation of measured DLTS spectra on commercial GaAs p+pinn+ structures to indentify the deep level centers and their properties in pin region.
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