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Este trabajo se centra en el modelado y fabricacin de clulas fotovoltaicas en un semiconductor IIIV de ancho de banda prohibida reducido, el Antimoniuro de Galio (GaSb), para su uso en sistemas de conversin fotovoltaica de radiacin trmica en energa elctrica, ms conocidos como sistemas termofotovoltaicos. La Introduccin del documento describe los fundamentos bsicos y aplicaciones ms comunes de las tcnicas termofotovoltaicas. Tras ello, en la Primera Parte se aborda el modelado, simulacin y optimizacin de los dispositivos de GaSb. La Segunda Parte se dedica a detallar la tecnologa de fabricacin de los mismos, basada en difusiones de Zn en fase vapor sobre obleas de nGaSb. En la Tercera Parte se aplica dicha tecnologa y se presentan las clulas fabricadas y sus caractersticas elctricas y pticas. Adems, se realiza una comparacin de los resultados experimentales obtenidos y las predicciones de los modelos desarrollados, con la intencin de corroborar la validez de los mismos. Por ltimo, en la Cuarta Parte se disean y fabrican varios prototipos de sistemas termofotovoltaicos, para su aplicacin en el autoabastecimiento elctrico de electrodomsticos a gas.
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