Next Generation MRAM Development: A 4kb MRAM Array for Spin Torque Transfer Switching Measurement,Used

Next Generation MRAM Development: A 4kb MRAM Array for Spin Torque Transfer Switching Measurement,Used

In Stock
SKU: DADAX3838351924
Brand: LAP Lambert Academic Publishing
Condition: New
$94.22
Quantity
Add to wishlist
Add to compare
Sold by Ergodebooks, an authorized reseller.

Processing time: 1-3 days

US Orders Ships in: 3-5 days

International Orders Ships in: 8-12 days

Return Policy: 15-days return on defective items

Payment Option
Payment Methods

Help

If you have any questions, you are always welcome to contact us. We'll get back to you as soon as possible, withing 24 hours on weekdays.

Customer service

All questions about your order, return and delivery must be sent to our customer service team by e-mail at yourstore@yourdomain.com

Sale & Press

If you are interested in selling our products, need more information about our brand or wish to make a collaboration, please contact us at press@yourdomain.com

Only recently has the possibility of a universal memory, a fast random access memory that retains its state during complete powerdown, turned into a realizable opportunity. Such a memory can eliminate static power, improve system reliability in the face of power interruption, and eliminate the need for a separate FLASH memory module, reducing system component count. One candidate in the race for a universal memory is magnetoresistive random access memory (MRAM). In the development of MRAM, design challenges related to isolating memory elements, obtaining a compatible operating point with CMOS technology, and sensing data reliably have emerged. Therefore, there still exists a barrier to achieving the cost and performance characteristics of traditional volatile solid state memoriesSRAM and DRAM. In this work, a 4kb MRAM array is designed to evaluate the feasibility of a promising new form of MRAM based on the phenomenon of spin torque transfer switching. The design of the test site and measurement setup is discussed, showing how to explore a multidimensional parameter space of operating conditions to obtain a viable design point for the next generation of MRAM technology.

⚠️ WARNING (California Proposition 65):

This product may contain chemicals known to the State of California to cause cancer, birth defects, or other reproductive harm.

For more information, please visit www.P65Warnings.ca.gov.

Recently Viewed