SelfOrganized Quantum Dots for Memories: Electronic Properties and Carrier Dynamics (Springer Theses),Used

SelfOrganized Quantum Dots for Memories: Electronic Properties and Carrier Dynamics (Springer Theses),Used

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Todays semiconductor memory market is divided between two types of memory: DRAM and Flash. Each has its own advantages and disadvantages. While DRAM is fast but volatile, Flash is nonvolatile but slow. A memory system based on selforganized quantum dots (QDs) as storage node could combine the advantages of modern DRAM and Flash, thus merging the latters nonvolatility with very fast write times.This thesis investigates the electronic properties of and carrier dynamics in selforganized quantum dots by means of timeresolved capacitance spectroscopy and timeresolved current measurements. The first aim is to study the localization energy of various QD systems in order to assess the potential of increasing the storage time in QDs to nonvolatility. Surprisingly, it is found that the major impact of carrier capture crosssections of QDs is to influence, and at times counterbalance, carrier storage in addition to the localization energy. The second aim is to study the coupling between a layer of selforganized QDs and a twodimensional hole gas (2DHG), which is relevant for the readout process in memory systems. The investigation yields the discovery of the manyparticle ground states in the QD ensemble. In addition to its technological relevance, the thesis also offers new insights into the fascinating field of nanostructure physics.

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