Author
Bindng
Very High Speed MOS Devices
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This comprehensive work describes veryhigh speed and veryhigh performance metaloxidesilicon (MOS) devices, which are mainstream technologies in very (and ultra ) largescale integration microelectronics and research. The book provides wide ranging coverage of this area, from basicsubjects to a variety of applications. The authors are researchers and engineers from the Toshiba Corporation, a world leader in MOS device technology, especially in the innovative area of lowpower complementary MOS. The book includes a review of the concept and historical background of MOSdevices, and information on their basic operating principles and physical characteristics. It details submicronscale device process technologies, simulation and computerassisted design, and circuit design for both logic and memory LSIs, ranging from a basic introduction to practical high speedapplications, with many diagrams and actual data. In particular, high speed MOS devices are considered at the system level, rather than the individual device or component level, in the achievement of overall high system speed and performance. Future trends and issues in MOS technology, includingthreedimensional LSIs are also described.
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