Zinc Oxide ThinFilm Transistors: An Investigation of the Performance and Stability of Zinc Oxide Thinfilm Transistors and the ,Used

Zinc Oxide ThinFilm Transistors: An Investigation of the Performance and Stability of Zinc Oxide Thinfilm Transistors and the ,Used

Out of Stock
SKU: DADAX3844396535
Brand: LAP Lambert Academic Publishing
Condition: New
$101.04
Sold out
Free Standard Shipping Across USA
Quantity
Add to wishlist
Add to compare

Sold by Ergodebooks, an authorized reseller.

Returns accepted within 30 days | support@ergodebooks.com

Verified
Shipping Information
  • Free Standard Shipping — United States only
  • Processing Time: 3–5 business days
  • Estimated Delivery: 6–10 business days after dispatch
  • Double-boxed, fully insured & discreetly packaged
  • Tracking number sent via email once dispatched
Returns & Refund

Returns accepted within 30 days of delivery.

Damaged or Defective Item

Free return shipping + replacement or full refund

Wrong Item Received

Free return shipping + replacement or full refund

Change of Mind

Return shipping at customer's expense · 25% restocking fee applies

All returns require a Return Authorization (RA) number before sending.

To initiate a return, contact us:

support@ergodebooks.com +1 (281) 738-1050
View Full Return & Refund Policy
Payment Option
Payment Methods

Help

If you have any questions, you are always welcome to contact us. We'll get back to you as soon as possible, withing 24 hours on weekdays.

Customer service

All questions about your order, return and delivery must be sent to our customer service team by e-mail at yourstore@yourdomain.com

Sale & Press

If you are interested in selling our products, need more information about our brand or wish to make a collaboration, please contact us at press@yourdomain.com

Transparent oxide semiconducting films have continued to receive considerable attention, from a fundamental and applicationbased point of view, primarily because of their useful fundamental properties. Of particular interest is zinc oxide (ZnO), an ntype semiconductor that exhibits excellent optical, electrical, catalytic and gassensing properties, and has many applications in various fields. In this work, thin film transistor (TFT) arrays based on ZnO have been prepared by reactive radio frequency (RF) magnetron sputtering. The sputtering process was carried out at room temperature with no intentional heating. The aim of this is to prepare ZnO thin films with stable semiconducting electrical properties to be used as the active channel in TFTs; and to understand the role of intrinsic point defects in device performance and stability. The effect of oxygen (O2) adsorption on TFT device characteristics is also investigated. TFTs incorporating silicon dioxide, and different highk dielectrics are also investigated.

⚠️ WARNING (California Proposition 65):

This product may contain chemicals known to the State of California to cause cancer, birth defects, or other reproductive harm.

For more information, please visit www.P65Warnings.ca.gov.

Recently Viewed